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Publication List in 2002

Original Papers

  1. Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Masahiro Orita, Masahiro Hirano, Hideo Hosono: Novel film growth technique of single crystalline In2O3(ZnO)m (m=integer) homologous compound; Thin Solid Films, 411, 147-151, (2002).[Lab sn=196]
  2. Ken-ichi Kawamura, Masahiro Hirano, Toshio Kamiya, Hideo Hosono: Holographic writing of volume-type micro-gratings in silica glass by a single chirped laser pulse; Appl. Phys. Lett., 81, 1137-1139, (2002).[Lab sn=214]
  3. Y. Furuta, H. Mizuta, K. Nakazato, T. Kamiya, Y.T. Tan, Z.A.K. Durrani, K. Taniguchi: Characterisation of tunnel-barriers in polycrystalline Si point-contact single-electron transistors; Jpn. J. Appl. Phys., 41, 2675-2678, (2002).[Lab sn=437]
  4. Toshio Kamiya, Z. A. K. Durrani, H. Ahmed: Control of grain-boundary tunneling barriers in polycrystalline silicon; Appl. Phys. Lett., 81, 2388-2390, (2002).[Lab sn=436]
  5. Z.A.K. Durrani, T. Kamiya, Y.T. Tan, H. Ahmed, N. Lloyd: Single-electron charging in nanocrystalline siilcon point-contacts; Microelectronic Engineering, 63, 267-275, (2002).[Lab sn=438]
  6. Kazushige Ueda, Hideo Hosono: Crystal structure of LaCuOS1-xSex oxychalcogenides; Thin Solid Films, 411, 115-118, (2002).[Lab sn=177]
  7. Masahiro Orita, Hidenori Hiramatsu, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono: Preparation of highly conductive, deep ultraviolet transparent b-Ga2O3 thin film at low deposition temperatures; Thin Solid Films, 411, 134-139, (2002).[Lab sn=200]
  8. Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Orita, Masahiro Hirano, Hideo Hosono: Preparation of transparent p-type (La1-xSrxO)CuS thin films by r.f.sputtering technique; Thin Solid Films, 411, 125-128, (2002).[Lab sn=201]
  9. Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Orita, Masahiro Hirano and Hideo Hosono: Heteroepitaxial Growth of a Wide-Gap P-type Semiconductor, LaCuOS; Appl. Phys. Lett., 81, 598-600, (2002).[Lab sn=4214]
  10. Q. X. Li, K. Hayashi, M. Nishioka, H. Kashiwagi, M. Hirano, Y. Torimoto, H. Hosono, M. Sadakata: Absolute emission current density of O- from 12CaO·7Al2O3 crystal; Appl. Phys. Lett., 80, 4259-4261, (2002).[Lab sn=171]
  11. K. Hayashi, M. Hirano, Q.-X. Li, M. Nishioka, M. Sadakata, Y. Torimoto, S. Matsuishi, H. Hosono: Electric Field Emission of High Density O Ions from 12CaO·7Al2O3 Engineered to Incorporate Oxygen Radicals; Electrochemical and Solid-State Letters, 5, J13-J16, (2002).[Lab sn=180]
  12. K. Hayashi, M. Hirano, Q.-X. Li, M. Nishioka, M. Sadakata, Y. Torimoto, S. Matsuishi, and H. Hosono: Electric Field Emission of High Density O- Ions from 12CaO・7Al2O3 Engineered to Incorporate Oxygen Radicals; Electrochemical and Solid State Lett., 5, J13-16, (2002).[Lab sn=4790]
  13. Katsuro Hayashi, Masahiro Hirano, Satoru Matsuishi, Hideo Hosono: Microporous crystal 12CaO·7Al2O3 encaging abundant O- radicals; J. Am. Chem. Soc., 124, 738, (2002).[Lab sn=192]
  14. Quanxin X. Li, Katsuro Hayashi, Masateru Nishioka, Hideo Kashiwagi, Masahiro Hirano, Yoshifumi Torimoto, Hideo Hosono, Masayoshi Sadakata: Reproducibility of O- negative ion emission from 12CaO·7Al2O3 surface; Jpn. J. Appl. Phys., 41, L530-L532, (2002).[Lab sn=203]
  15. H.Hosono, H.Ohta, K.Hayashi, M.Orita, and M.Hirano: Near UV-emitting diodes based on transparent p-n junctions composed of hetroepitaxiallly grown p-SrCu2O2 and n-ZnO; J. Cryst. Growth, 237-239, 237-239, (2002).[Lab sn=4788]
  16. H.Hosono, K.Kajihara, M.Hirano, and M.Oto: Photochemistry in phosphorus-doped silica glass by ArF excimer laser irradiation:crucial role of H2-loading; J. Appl. Phys., 91, 4121, (2002).[Lab sn=4784]
  17. Masashi Miyakawa, Kasuzhige Ueda and Hideo Hosono: Carrier generation in highly oriented WO3 films by proton or helium implantation; J. Appl. Phys., 92, 2017-2022, (2002).[Lab sn=4791]
  18. Koichi KAJIHARA, Yoshiaki IKUTA, Masahiro HIRANO, and Hideo HOSONO: Dependence of Defect Formation in SiO2 Glass by F2-laser-irradiation; Applied Physics Letters, 81, 3164-3166, (2002).[Lab sn=4219]
  19. Hiroshi Mizoguchi, Kazushige Ueda, Masahiro Orita, Sang-Chul Moon, Koichi Kajihara, Masahiro Hirano, Hideo Hosono: Decomposition of water by a CaTiO3 photocatalyst under UV light irradiation; Mater. Res. Bull., 2115, 1-6, (2002).[Lab sn=178]
  20. L. Skuja, K. Kajihara, T. Kinoshita, M. Hirano, H. Hosono: The behavior of interstitial oxygen atoms induced by F2 laser irradiation of oxygen-rich glassy SiO2; Nuclear Instruments and Methods in Physics Research B, 191, 127-130, (2002).[Lab sn=205]
  21. Hideo Hosono, Koichi Kajihara, Takenobu Suzuki, Yoshiaki Ikuta, Linards Skuja, Masahiro Hirano: Vacuum ultraviolet absorption band of non-bridging oxygen hole centers in SiO2 glass; Solid State Comm., 122, 117-120, (2002).[Lab sn=208]
  22. Sakyo HIROSE, Kazushige UEDA, Hiroshi KAWAZOE, and Hideo HOSONO: Electronic Structure of Sr2Cu2ZnO2S2 Layered Oxysulfide with CuS Layers; Chem. Mater., 14, 1037, (2002).[Lab sn=4208]
  23. Hidenori Hiramatsu, Masahiro Orita, Masahiro Hirano, Kazushige Ueda, Hideo Hosono: Electrical conductivity control in transparent p-type (LaO)CuS thin films prepared by rf sputtering; J. Appl. Phys., 91, 9177-9181, (2002).[Lab sn=181]
  24. Hiroshi Mizoguchi, Masahiro Orita, Masahiro Hirano, Satoru Fujitsu, Tomonari Takeuchi, Hideo Hosono: NbO2F: An oxyfluoride phase with wide band gap and electrochromic properties; Appl. Phys. Lett., 80, 4732-4734, (2002).[Lab sn=193]
  25. Satoru Narushima, Masahiro Orita, Masahiro Hirano, Hideo Hosono: Electronic structure and transport properties in the transparent amorphous oxide semiconductor 2 CdO・GeO2; Phys. Rev. B, 66, 035203, (2002).[Lab sn=183]
  26. Takenobu SUZUKI and Hideo HOSONO: Ion-beam-doping of silver into amorphous As2S3 thin films; J.Appl.Phys., 92, 1821, (2002).[Lab sn=4211]
  27. Koichi Kajihara, Linards Skuja, Masahiro Hirano, Hideo Hosono: Diffusion and Reactions of Hydrogen in F2-Laser-Irradiated SiO2 Glass; Phys. Rev. Lett., 89, 135507, (2002).[Lab sn=169]
  28. Koichi Kajihara, Yoshiaki Ikuta, Masahiro Hirano, Hideo Hosono: Power dependence of defect formation in SiO2 glass by F2 laser irradiation; Appl. Phys. Lett., 81, 3164-3166, (2002).[Lab sn=170]
  29. Katsuro Hayashi, Satoru Matsuishi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono: Light-induced conversion of an insulating refractory oxide into a persistent electronic conductor; Nature, 419, 462-465, (2002).[Lab sn=191]
  30. S. Narushima, M. Orita, M. Hirano, H. Hosono: Transparent conductive amorphous oxides: Electron-transport properties and electronic structure; Glasstech. Ber. Glass Sci. Tech., 75, 48-53, (2002).[Lab sn=4824]
  31. L. Skuja, M. Hirano, K. Kajihara, H. Hosono: Point defect creation by photochemical processes in glassy silica; Phys. Chem. Glasses, 43, 145-148, (2002).[Lab sn=4901]
  32. L. Skuja, M. Hirano, H. Hosono, K. Kajihara, A. Silin: UV-induced effects in glassy silica: transformation of peroxy radicals to oxygen dangling bonds; Glastech. Ber. Glass Sci. Technol., 75, 24-29, (2002).[Lab sn=4906]
  33. Ohta, H.; Orita, M.; Hirano, M.; Ueda, K.; Hosono, H.: Epitaxial growth of transparent conductive oxides; Int. J. Modern Phys. B, 16, 173-180, (2002).[Lab sn=4811]
  34. Ohta, H.; Orita, M.; Hirano, M.; Hosono, H.: Fabrication and current injection UV-light emission from a transparent p-n hetero-junction composed of p-SrCu2O2 and n-ZnO; Key Engineering Materials, 214-215, 75-80, (2002).[Lab sn=4812]
  35. Hiromiti OHTA, Masahiro ORITA, Masahiro HIRANO, Kazushige UEDA, and Hide HOSONO: Epitaxial Growth of Transparent Conductive Oxides; International Journal of Modern Physics B, 16, 173-180, (2002).[Lab sn=185]
  36. H.Kamioka, T. Miura, K. Kawamura, M. Hirano, and H. Hosono: Fine-pitched microgratings encoded by interference of UV femtosecond laser pulses; J. Nanoscience & Nanotech., 2, 321-322, (2002).[Lab sn=4215]
  37. Katsuro Hayashi, Masahiro Hirano, Hideo Hosono: Translucent ceramics of 12CaO・7Al2O3 with microporous structure; J. Mater. Res., 17, 1244-1247, (2002).[Lab sn=206]
  38. Quanxin Li, Hideo Hosono, Masahiro Hirano, Katsuro Hayashi, Masateru Nishioka, Hideo Kashiwagi, Yoshifumi Torimoto, Masayoshi Sadakata: High-intensity atomic oxygen radical anion emission mechanism from 12CaO・7Al2O3 crystal surface; Surf. Sci., 527, 100-112, (2002).[Lab sn=215]
  39. Hidenori HIRAMATSU, Hiromichi OHTA, Masahiro HIRANO, and Hideo HOSONO: Heteroepitaxial growth of single-phase zinc blende ZnS films on transparent substrates by pulsed laser deposition under H2S atmosphere; Solid State Commun., 124, 411-415, (2002).[Lab sn=4220]
  40. Ken-ichi Kawamura, Eiji Motomitsu, Masahiro Hirano, Hideo Hosono: Formation of microstructure in SiO2 thin film by a femtosecond laser pulse; Jpn. J. Appl. Phys., 41, 4400-4403, (2002).[Lab sn=187]
  41. K. Kajihara, Y. Ikuta, M. Hirano and H. Hosono: Structural alternation and defect formation in SiO2 glasses by F2 excimer laser irradiation; Phys. Chem. Glasses, 43, 137-40, (2002).[Lab sn=4168]
  42. M.Hirano, K.Kawamura, and H.Hosono: Encoding of holographic grating and periodic nano-structure by femtosecond laser pulse; Appl. Surf. Sci., 197-198, 688-698, (2002).[Lab sn=4794]
  43. H.Mizoguchi, K.Ueda, M.Orita, M.Hirano, and H.Hosono: Complete water splitting by light irradiation of CaTiO3; Materials Research Bulletin, 37, 2401-06, (2002).[Lab sn=4798]
  44. Koichi Kajihara, Linards Skuja, Masahiro Hirano, Hideo Hosono: Publisher's Note: Diffusion and Reactions of Hydrogen in F2-Laser-Irradiated SiO2 Glass [Phys. Rev. Lett. 89, 135507 (2002)]; Phys. Rev. Lett., 89, 135507, (2002).[Lab sn=168]
  45. Kazushige Ueda, Hideo Hosono: Band gap engineering, band edge emission, and p-type conductivity in wide-gap LaCuOS1-xSex oxychalcogenides; J. Appl. Phys., 91, 4768, (2002).[Lab sn=172]
  46. M. Miyakawa, K. Ueda, H. Hosono: Carrier control in transparent semiconducting oxide thin films by ion implantation: MgIn2O4 and ZnO; Nuclear Instruments and Methods in Physics Research B, 191, 173-177, (2002).[Lab sn=173]
  47. M. Miyakawa, R. Noshiro, T. Ogawa, K. Ueda, H. Kawazoe, H. Ohta, M. Orita, M. Hirano, H. Hosono: Carrier doping into MgIn2O4 epitaxial thin films by proton implantation; J. Appl. Phys., 91, 2112, (2002).[Lab sn=174]
  48. M. Miyakawa, H. Un'no, K. Ueda, H. Kawazoe, H. Hosono: Carrier generation in polycrystalline MgIn2O4 thin films by proton implantation; Phil. Mag. B, 82, 1155-1162, (2002).[Lab sn=175]
  49. Satoshi Watauchi, Isao Tanaka, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono: Crystal growth of Ca12Al14O33 by the floating zone method; Journal of Crystal Growth, 237-239, 801-805, (2002).[Lab sn=176]
  50. Yoshiaki Ikuta, Koichi Kajihara, Masahiro Hirano, Shinya Kikugawa, Hideo Hosono: Effects of H2 impregnation on excimer-laser-induced oxygen-deficient center formation in synthetic SiO2 glass; Appl. Phys. Lett., 80, 3916-3918, (2002).[Lab sn=179]
  51. Hiromichi Ohta, Masahiro Orita, Masahiro Hirano, Iwao Yagi, Kazushige Ueda, Hideo Hosono: Electronic structure and optical properties of SrCu2O2; J. Appl. Phys., 91, 3074, (2002).[Lab sn=182]
  52. Masahiro Hirano, Ken-ichi Kawamura, Hideo Hosono: Encoding of holographic grating and periodic nano-structure by femtosecond laser pulse; Appl. Surf. Sci., 8093, 1-11, (2002).[Lab sn=184]
  53. Hiroshi Yanagi, Kazushige Ueda, Hiromichi Ohta, Masahiro Orita, Masahiro Hirano, Hideo Hosono: Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure; Sol. State Comm., 121, 15-18, (2002).[Lab sn=186]
  54. H. Hosono, H. Ohta, M. Orita, K. Ueda, M. Hirano: Frontier of transparent conductive oxide thin films; Vacuum, 66, 419-425, (2002).[Lab sn=188]
  55. Zhenlin Liu, Shingo Ono, Toshimasa Kozeki, Yuji Suzuki, Nobuhiko Sarukura, Hideo Hosono: Generation of intense 25-fs pulses at 290 nm by use of a hollow fiber filled with high-pressure argon gas; Jpn. J. Appl. Phys., 41, L986-L988, (2002).[Lab sn=189]
  56. Hideo Hosono, Ken-ichi Kawamura, Satoru Matsuishi, Masahiro Hirano: Holographic writing of micro-gratings and nanostructures on amorphous SiO2 by near infrared femtosecond pulses; Nuclear Instruments and Methods in Physics Research B, 191, 89-97, (2002).[Lab sn=190]
  57. H. Hosono, H. Ohta, K. Hayashi, M. Orita, M. Hirano: Near-UV emitting diodes based on a transparent p-n junction composed of heteroepitaxially grown p-SrCu2O2 and n-ZnO; Journal of Crystal Growth, 237-239, 496-502, (2002).[Lab sn=194]
  58. Ken-ichi Kawamura, Naoko Ito, Nobuhiko Sarukura, Masahiro Hirano, Hideo Hosono: New adjustment technique for time coincidence of femtosecond laser pulses using third harmonic generation in air and its application to holograph encoding system; Rev. Sci. Instruments, 73, 1711, (2002).[Lab sn=195]
  59. Takenobu Suzuki, Masahiro Hirano, Hideo Hosono: Optical gaps of alkali borate and alkali fluoroborate glasses; J. Appl. Phys., 91, 4149, (2002).[Lab sn=197]
  60. Hideo Hosono, Koichi Kajihara, Masahiro Hirano, Masanori Oto: Photochemistry in phosphorus-doped silica glass by ArF excimer laser irradiation: Crucial effect of H2 loading; J. Appl. Phys., 91, 4121, (2002).[Lab sn=198]
  61. Satoshi Takeda, Ryoji Akiyama, Hideo Hosono: Precipitation of nanometer-sized SnO2 crystals and Sn depth profile in heat-treated float glass; J.Non-Cryst. Solids, 311, 273-280, (2002).[Lab sn=199]
  62. Hiromichi Ohta, Masahiro Orita, Masahiro Hirano, Hideo Hosono: Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia; J. Appl. Phys., 91, 3547-3550, (2002).[Lab sn=204]
  63. Naoto Kikuchi, Hideo Hosono, Hiroshi Kawazoe, Osamu Tanegashima, Isao Ota, Yutaka Kimura: Transparent conducting oxide, InSbO4 with random rutile structure; Vacuum, 65, 81-84, (2002).[Lab sn=207]
  64. Hiroshi Mizoguchi, Masahiro Hirano, Satoru Fujitsu, Tomonari Takeuchi, Kazushige Ueda, Hideo Hosono: ZnRh2O4: A p-type semiconducting oxide with a valence band composed of a low spin state of Rh3+ in a 4d6 configuration; Appl. Phys. Lett., 80, 1207-1209, (2002).[Lab sn=209]
  65. T. Kamiya, Y.T. Tan, Z.A.K. Durrani, H. Ahmed: Modification of the tunneling barrier in a nanocrystalline silicon single-electron transistor; J. Non-Cryst. Solids, 299-302, 405-410, (2002).[Lab sn=439]

Proceedings

  1. H. Mizuta, Y. Furuta, T. Kamiya, Y. T. Tan, Z.A.K. Durrani, K. Nakazato: Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors; Polycrystalline Semiconductors VII - Bluk Materials, Thin Films, and Devices, T. Sameshima, T. Fuyuki, H.P. Strunk, J.H.Werner eds., in Series 'Solid State Phenomena', 93, 419-428, (2002).[Lab sn=1153]
  2. H. Ohta, M. Orita, H. Hiramatsu, K. Nomura, M. Miyakawa, K. Ueda, M. Hirano, and H. Hosono: Frontier of Transparent Conductive Oxides; 10th International Ceramics Congress and 3rd Forum on New Materials (CIMTEC2002), 98, 983-994, (2002).[Lab sn=4181]
  3. H. Kamioka, K. Kawamura, T. Miura, M. Hirano, H. Hosono: Micro-grating formation with femtosecond ultraviolet laser on optical materials; Proceedings of SPIE conference (High-Power Laser Ablation 4), 4760, 994, (2002).[Lab sn=4944]
  4. M. Hirano, K. Kawamura, H. Hosono: Macro and nano-machining of transparent dielectrics by interfered two short laser pulses; Proceedings of SPIE conference (International symposium of photonic glasses 2002 (ISPG 2002))., 5061, 89-95, (2002).[Lab sn=4945]
  5. Ueda, K.; Hosono, H.; Hiramatsu, H.; Orita, M.; Hirano, M.; Kawazoe, H.: Wide-gap P-type Cu(I)-containing layered oxychalcogenides; Proceedings of CIMTEC, 2002, 1029-1036, (2002).[Lab sn=4865]
  6. Toshio Kamiya, Yoshikazu Furuta, Yong-Tsong Tan, Z. A. K. Durrani, Hiroshi Mizuta, H. Ahmed: Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices; Polycrystalline Semiconductors VII - Bluk Materials, Thn Films, and Devices, T. Sameshima, T. Fuyuki, H.P. Strunk, J.H.Werner eds. (Scitech Publ., Uettikon am See, Switzerland, 2003) (Nara, Japan, 10-13, Sep., 2002), (2002).[Lab sn=4480]

Review Papers

  1. 神谷利夫: 英国ケンブリッジ滞在記; 東工大クロニクル 海外ニュース, 366, 11-12, (2002).[Lab sn=354]
  2. 神谷利夫: ケンブリッジ大学留学記; プラズマエレクトロニクス分科会会報《海外の研究事情》, 36, 14-19, (2002).[Lab sn=352]
  3. 神谷利夫: 孤独な(?)材料屋の英国ケンブリッジ留学記; 現代化学 ポスドク留学記, 376, 47-50, (2002).[Lab sn=353]

Books

  1. H.Hosono, N.Ichinose, and Y.Shigesato (edited): Transparent Conductive Oxide Thin Films 2001; Elsevier, (2002).[Lab sn=4686]
  2. Toshio Kamiya, Wataru Futako, Isamu Shimizu: Control of bandgap and network structure in hydrogenated amorphous silicon; Recent Research Developments in Non-Crystalline Solids Vol., 2, 311-334, (2002).[Lab sn=343]

Awards

Related Articles

  1. H. Hosono: The unbearable lightness of conducting; Web Science Now, (2002).[Lab sn=213]
  2. Ken-ichi Kawamura: Single laser writes inside glass; Photonics Sep., 17, (2002).[Lab sn=13]
  3. W. Pewestrof: Light-induced conversion of an insulatin grefractory oxide into a persistent electronic conductor; Electronic properties D 8000, 01-016, (2002).[Lab sn=17]

Plenary Lectures

Invited Talks

  1. H. Mizuta, Y. Furuta, T. Kamiya, Y. T. Tan, Z.A.K. Durrani, K. Nakazato, H. Ahmed: Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors; Abst. Int. Conf. on Polycrystalline Semiconductors 2002 (PolySE2002) (Nara, Japan, 10-13, Sep., 2002), 12, (2002).[Lab sn=4475]

International Conferences

  1. Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono: Fabrication of transparent MISFET using InGaO3(ZnO)5 single crystalline thin film with normally insulating nature; Mater. Res. Soc. Symp. Abst. (Boston, USA, 2-6, Dec., 2002), (2002).[Lab sn=4472]
  2. H. Mizuta, Y. Furuta, T. Kamiya, Y. T. Tan, Z.A.K. Durrani, K. Nakazato, H. Ahmed: Single-electron charging phenomena in nano/polycrystalline silicon point-contact transistors; Abst. Int. Conf. on Polycrystalline Semiconductors 2002 (PolySE2002) (Nara, Japan, 10-13, Sep., 2002), 12, (2002).[Lab sn=4475]
  3. K. Kawamura, M. Hirano, T. Kamiya, H. Hosono: Writing of volume hologram in pure silica by a chirped femtosecond laser pulse; Mater. Res. Soc. Symp. Abst. (Boston, USA, 2-6, Dec., 2002), (2002).[Lab sn=508]
  4. Satoru Narushima, Hiroshi Mizoguchi, Hiromichi Ohta, Masahiro Hirano, Ken-ichi Shimizu, Kazushige Ueda, Toshio Kamiya, Hideo Hosono: X-ray Amorphous P-type Conductive Oxide; ZnRh2O4; Mater. Res. Soc. Symp. Abst. (Boston, USA, 2-6, Dec., 2002), (2002).[Lab sn=506]
  5. Toshio Kamiya, Yoshikazu Furuta, Yong-Tsong Tan, Z. A. K. Durrani, Hiroshi Mizuta, H. Ahmed: Effects of oxidation and annealing temperature on grain boundary properties in polycrystalline silicon probed using nanometer-scale point-contact devices; Abst. Int. Conf. on Polycrystalline Semiconductors 2002 (PolySE2002) (Nara, Japan, 10-13, Sep., 2002), 11, (2002).[Lab sn=4474]

Domestic Conferences